15N10 TO251
Manufacturer:
VBsemi
Mfr.Part #:
15N10 TO251
Datasheet:
Description:
MOSFETs TO-251-3 Through Hole N-Channel number of channels:1 61 W 100 V Continuous Drain Current (ID):15 A 20 nC
| Parameter | Value |
|---|---|
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Continuous Drain Current (ID) | 15 A |
| Power Dissipation | 61 W |
| Gate to Source Threshold Voltage | 1 V to 3 V |
| Drain to Source Resistance | 110 mΩ |
| Gate Charge | 20 nC |
| Input capacitance | 892 pF |
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